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      Deterministic switching of ferromagnetism at room temperature using an electric field.

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          Abstract

          The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO3 (refs 4 and 5). Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics.

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          Most cited references46

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study

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              Magnetic control of ferroelectric polarization.

              The magnetoelectric effect--the induction of magnetization by means of an electric field and induction of polarization by means of a magnetic field--was first presumed to exist by Pierre Curie, and subsequently attracted a great deal of interest in the 1960s and 1970s (refs 2-4). More recently, related studies on magnetic ferroelectrics have signalled a revival of interest in this phenomenon. From a technological point of view, the mutual control of electric and magnetic properties is an attractive possibility, but the number of candidate materials is limited and the effects are typically too small to be useful in applications. Here we report the discovery of ferroelectricity in a perovskite manganite, TbMnO3, where the effect of spin frustration causes sinusoidal antiferromagnetic ordering. The modulated magnetic structure is accompanied by a magnetoelastically induced lattice modulation, and with the emergence of a spontaneous polarization. In the magnetic ferroelectric TbMnO3, we found gigantic magnetoelectric and magnetocapacitance effects, which can be attributed to switching of the electric polarization induced by magnetic fields. Frustrated spin systems therefore provide a new area to search for magnetoelectric media.
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                Author and article information

                Journal
                Nature
                Nature
                1476-4687
                0028-0836
                Dec 18 2014
                : 516
                : 7531
                Affiliations
                [1 ] Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA.
                [2 ] Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269, USA.
                [3 ] Department of Physics, Durham University, Durham DH1 3LE, UK.
                [4 ] 1] Department of Physics, University of California, Berkeley, California 94720, USA [2] School of Materials Science and Engineering, and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
                [5 ] Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4 10, 8093 Zurich, Switzerland.
                [6 ] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
                [7 ] Department of Physics, Cornell University, Ithaca, New York 14853, USA.
                [8 ] Department of Physics, University of California, Berkeley, California 94720, USA.
                [9 ] Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720, USA.
                [10 ] 1] Department of Physics, Cornell University, Ithaca, New York 14853, USA [2] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA.
                [11 ] 1] Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA [2] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA.
                [12 ] Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain.
                [13 ] 1] Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269, USA [2] Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, USA.
                [14 ] 1] Department of Physics, University of California, Berkeley, California 94720, USA [2] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA [3] Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
                Article
                nature14004
                10.1038/nature14004
                25519134
                f475a7c1-efe7-4a3b-be99-cbdd26733688
                History

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