EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

Nipoti, R.; Servidori, M.; Milita, S.; Balboni, R.; Sealy, L.; Barklie, R.C; Lulli, G.; Roberta, Nipoti

doi:10.1016/0168-583X(94)00485-4

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EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

Author(s): L. Sealy , R.C. Barklie , G. Lulli , R. Nipoti , R. Balboni , S. Milita , M. Servidori

Publication date Created: March 1995

Publication date (Print): March 1995

Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Publisher: Elsevier BV

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Most cited references 9

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Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysis

C. R. Wie, T. A. Tombrello, T. Vreeland (1986)

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Structure of multiple-vacancy (oxygen) centers in irradiated silicon

K. L. Brower (1971)

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EPR study of neutron-irradiated silicon: A positive charge state of the\(〈100〉\)split di-interstitial

Nikolai Gerasimenko, James Corbett, Young-Hoon Lee (1976)

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Author and article information

Journal

Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Abbreviated Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Publisher: Elsevier BV

ISSN (Print): 0168583X

Publication date Created: March 1995

Publication date (Print): March 1995

Volume: 96

Issue: 1-2

Pages: 215-218

Article

DOI: 10.1016/0168-583X(94)00485-4

SO-VID: f4ce31a8-cde1-4843-8480-8ed16947569a

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EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

Read this article at

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TKD - Transmission Kikuchi Diffraction

Most cited references 9

Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysis

Structure of multiple-vacancy (oxygen) centers in irradiated silicon

EPR study of neutron-irradiated silicon: A positive charge state of the\(〈100〉\)split di-interstitial

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