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      A highly sensitive pressure sensor using a double-layered graphene structure for tactile sensing

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          Abstract

          A sensor adopting the electromechanical characteristics of single-layered graphene recognizes surface morphology. Tactile sensing for the sensor is demonstrated on the frequency scale of human perception induced by gentle touching.

          Abstract

          In this paper, we propose a graphene sensor using two separated single-layered graphenes on a flexible substrate for use as a pressure sensor, such as for soft electronics. The working pressure corresponds to the range in which human perception recognizes surface morphologies. A specific design of the sensor structure drives the piezoresistive character due to the contact resistance between two graphene layers and the electromechanical properties of graphene itself. Accordingly, sensitivity in resistance change is given by two modes for low pressure (−0.24 kPa −1) and high pressure (0.039 kPa −1) with a crossover pressure (700 Pa). This sensor can detect infinitesimal pressure as low as 0.3 Pa with uniformly applied vertical force. With the attachment of the artificial fingerprint structure (AFPS) on the sensor, the detection ability for both the locally generated shear force and actual human touch confirms recognition of the surface morphology constructed by periodic structures.

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          Most cited references20

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          Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers.

          The development of an electronic skin is critical to the realization of artificial intelligence that comes into direct contact with humans, and to biomedical applications such as prosthetic skin. To mimic the tactile sensing properties of natural skin, large arrays of pixel pressure sensors on a flexible and stretchable substrate are required. We demonstrate flexible, capacitive pressure sensors with unprecedented sensitivity and very short response times that can be inexpensively fabricated over large areas by microstructuring of thin films of the biocompatible elastomer polydimethylsiloxane. The pressure sensitivity of the microstructured films far surpassed that exhibited by unstructured elastomeric films of similar thickness, and is tunable by using different microstructures. The microstructured films were integrated into organic field-effect transistors as the dielectric layer, forming a new type of active sensor device with similarly excellent sensitivity and response times.
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            Silk-molded flexible, ultrasensitive, and highly stable electronic skin for monitoring human physiological signals.

            Flexible and transparent E-skin devices are achieved by combining silk-molded micro-patterned polydimethylsiloxane (PDMS) with single-walled carbon nanotube (SWNT) ultrathin films. The E-skin sensing device demonstrates superior sensitivity, a very low detectable pressure limit, a fast response time, and a high stability for the detection of superslight pressures, which may broaden their potential use as cost-effective wearable electronics for healthcare applications. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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              Highly stretchable resistive pressure sensors using a conductive elastomeric composite on a micropyramid array.

              A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode. The substrate contains an array of microscale pyramidal features, and the electrode comprises a polymer composite. When the pressure-induced geometrical change experienced by the electrode is maximized at 40% elongation, a sensitivity of 10.3 kPa(-1) is achieved.
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                Author and article information

                Journal
                NANOHL
                Nanoscale
                Nanoscale
                Royal Society of Chemistry (RSC)
                2040-3364
                2040-3372
                2015
                2015
                : 7
                : 27
                : 11652-11659
                Affiliations
                [1 ]Department of Electronic Engineering
                [2 ]Hanyang University
                [3 ]Seoul 133-791, South Korea
                Article
                10.1039/C5NR00076A
                26098064
                f50cbedd-7259-408b-b016-8d3c60f66b5a
                © 2015
                History

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