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      Surface Passivation of Boron-Diffused Junctions by a Borosilicate Glass and In Situ Grown Silicon Dioxide Interface Layer

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          Most cited references 20

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          Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

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            Wet chemical etching of silicate glasses in hydrofluoric acid based solutions

             G. Spierings (1993)
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              Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2]

               D. Brown,  M. Ghezzo (1973)
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                Author and article information

                Journal
                IEEE Journal of Photovoltaics
                IEEE J. Photovoltaics
                Institute of Electrical and Electronics Engineers (IEEE)
                2156-3381
                2156-3403
                March 2018
                March 2018
                : 8
                : 2
                : 435-440
                10.1109/JPHOTOV.2018.2792422
                © 2018
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