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Air-Stable, Solution-Processablen-Channel and Ambipolar Semiconductors for Thin-Film Transistors Based on the Indenofluorenebis(dicyanovinylene) Core
July 2008
July 2008
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Abstract
We present here the synthesis, characterization, and field-effect performance of a
novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based
copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based
field-effect transistors fabricated by spin-coating exhibit high electron mobilities
of 0.10-0.16 cm2/V s in air, low turn-on voltages (0 to +5 V), and high on/off ratios
of 10(7)-10(8). These devices also exhibit excellent air stability over a prolonged
time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example
of an air-stable ambipolar polymer processable from solution