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      A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

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          Antiferromagnetic spintronics

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            Antiferromagnetic spintronics

            Antiferromagnetic materials are internally magnetic, but the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets externally invisible. This implies that information stored in antiferromagnetic moments would be invisible to common magnetic probes, insensitive to disturbing magnetic fields, and the antiferromagnetic element would not magnetically affect its neighbours, regardless of how densely the elements are arranged in the device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. Among the outstanding questions is how to manipulate and detect the magnetic state of an antiferromagnet efficiently. In this Review we focus on recent works that have addressed this question. The field of antiferromagnetic spintronics can also be viewed from the general perspectives of spin transport, magnetic textures and dynamics, and materials research. We briefly mention this broader context, together with an outlook of future research and applications of antiferromagnetic spintronics.
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              A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.

              A spin valve is a microelectronic device in which high- and low-resistance states are realized by using both the charge and spin of carriers. Spin-valve structures used in modern hard-drive read heads and magnetic random access memoriescomprise two ferromagnetic electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunnelling magnetoresistance effect. Here we demonstrate more than 100% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet on one side and a non-magnetic metal on the other side of the tunnel barrier. Ferromagneticmoments in NiFe are reversed by external fields of approximately 50  mT or less, and the exchange-spring effect of NiFe on IrMn induces rotation of antiferromagnetic moments in IrMn, which is detected by the measured tunnelling anisotropic magnetoresistance. Our work demonstrates a spintronic element whose transport characteristics are governed by an antiferromagnet. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit-coupling-induced magnetotransport anisotropy using a single magnetic electrode. The antiferromagnetic tunnelling anisotropic magnetoresistance provides a means to study magnetic characteristics of antiferromagnetic films by an electronic-transport measurement.
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                Author and article information

                Journal
                Nature Nanotechnology
                Nature Nanotech
                Springer Nature
                1748-3387
                1748-3395
                February 2019
                January 7 2019
                February 2019
                : 14
                : 2
                : 131-136
                Article
                10.1038/s41565-018-0339-0
                30617308
                f5cc8038-c485-4c2e-83a0-e6a2e85d0f2e
                © 2019

                http://www.springer.com/tdm

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