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      Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator

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          Abstract

          Optics Express, 17(25), 22484

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          Micrometre-scale silicon electro-optic modulator.

          Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.
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            Electrooptical effects in silicon

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              The Past, Present, and Future of Silicon Photonics

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                Author and article information

                Journal
                The Optical Society
                2009
                24 November 2009
                24 February 2019
                Article
                10.1364/OE.17.022484
                20052172
                f63ba851-4bc3-45ab-8acb-27257f03edad
                History

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