109
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations

      research-article

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          In recent years, deep neural networks (DNN) have demonstrated significant business impact in large scale analysis and classification tasks such as speech recognition, visual object detection, pattern extraction, etc. Training of large DNNs, however, is universally considered as time consuming and computationally intensive task that demands datacenter-scale computational resources recruited for many days. Here we propose a concept of resistive processing unit (RPU) devices that can potentially accelerate DNN training by orders of magnitude while using much less power. The proposed RPU device can store and update the weight values locally thus minimizing data movement during training and allowing to fully exploit the locality and the parallelism of the training algorithm. We evaluate the effect of various RPU device features/non-idealities and system parameters on performance in order to derive the device and system level specifications for implementation of an accelerator chip for DNN training in a realistic CMOS-compatible technology. For large DNNs with about 1 billion weights this massively parallel RPU architecture can achieve acceleration factors of 30, 000 × compared to state-of-the-art microprocessors while providing power efficiency of 84, 000 GigaOps∕s∕W. Problems that currently require days of training on a datacenter-size cluster with thousands of machines can be addressed within hours on a single RPU accelerator. A system consisting of a cluster of RPU accelerators will be able to tackle Big Data problems with trillions of parameters that is impossible to address today like, for example, natural speech recognition and translation between all world languages, real-time analytics on large streams of business and scientific data, integration, and analysis of multimodal sensory data flows from a massive number of IoT (Internet of Things) sensors.

          Related collections

          Most cited references21

          • Record: found
          • Abstract: found
          • Article: not found

          Nanoscale memristor device as synapse in neuromorphic systems.

          A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal-oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.
            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Synaptic modifications in cultured hippocampal neurons: dependence on spike timing, synaptic strength, and postsynaptic cell type.

            Q Bi, G Bi, M Poo (1998)
            In cultures of dissociated rat hippocampal neurons, persistent potentiation and depression of glutamatergic synapses were induced by correlated spiking of presynaptic and postsynaptic neurons. The relative timing between the presynaptic and postsynaptic spiking determined the direction and the extent of synaptic changes. Repetitive postsynaptic spiking within a time window of 20 msec after presynaptic activation resulted in long-term potentiation (LTP), whereas postsynaptic spiking within a window of 20 msec before the repetitive presynaptic activation led to long-term depression (LTD). Significant LTP occurred only at synapses with relatively low initial strength, whereas the extent of LTD did not show obvious dependence on the initial synaptic strength. Both LTP and LTD depended on the activation of NMDA receptors and were absent in cases in which the postsynaptic neurons were GABAergic in nature. Blockade of L-type calcium channels with nimodipine abolished the induction of LTD and reduced the extent of LTP. These results underscore the importance of precise spike timing, synaptic strength, and postsynaptic cell type in the activity-induced modification of central synapses and suggest that Hebb's rule may need to incorporate a quantitative consideration of spike timing that reflects the narrow and asymmetric window for the induction of synaptic modification.
              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              Synaptic electronics: materials, devices and applications.

              In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material properties and electrical switching characteristics of a variety of synaptic devices are discussed, with a focus on the use of synaptic devices for neuromorphic or brain-inspired computing. Performance metrics desirable for large-scale implementations of synaptic devices are illustrated. A review of recent work on targeted computing applications with synaptic devices is presented.
                Bookmark

                Author and article information

                Contributors
                Journal
                Front Neurosci
                Front Neurosci
                Front. Neurosci.
                Frontiers in Neuroscience
                Frontiers Media S.A.
                1662-4548
                1662-453X
                21 July 2016
                2016
                : 10
                : 333
                Affiliations
                IBM T. J. Watson Research Center, Yorktown Heights NY, USA
                Author notes

                Edited by: Themis Prodromakis, University of Southampton, UK

                Reviewed by: Robert Legenstein, Graz University of Technology, Austria; Hesham Mostafa, University of Zurich and ETH Zurich, Switzerland

                *Correspondence: Tayfun Gokmen tgokmen@ 123456us.ibm.com

                This article was submitted to Neuromorphic Engineering, a section of the journal Frontiers in Neuroscience

                †Present Address: Yurii Vlasov, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA

                Article
                10.3389/fnins.2016.00333
                4954855
                27493624
                f6a4d7b1-555b-43d3-ab12-67ca5098d805
                Copyright © 2016 Gokmen and Vlasov.

                This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

                History
                : 04 April 2016
                : 01 July 2016
                Page count
                Figures: 5, Tables: 2, Equations: 4, References: 44, Pages: 13, Words: 10710
                Categories
                Neuroscience
                Original Research

                Neurosciences
                deep neural network training,synaptic device,machine learning,artificial neural networks,nanotechnology,materials engineering,electronic devices,memristive devices

                Comments

                Comment on this article