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1,350
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Microscopic location of electron traps induced by arsenic implantation in silicon dioxide
Author(s):
S. Alexandrova
,
D. R. Young
Publication date
Created:
January 1983
Publication date
(Print):
January 1983
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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Electron Channelling Contrast Imaging (ECCI)
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6
Record
: found
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Optically induced injection of hot electrons into SiO2
T. H. Ning
,
H. Yu
(1974)
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Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures
C. N. Berglund
,
E. H. Nicollian
(1970)
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Electron trapping by radiation‐induced charge in MOS devices
D. Young
,
J M Aitken
(1976)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
January 1983
Publication date (Print):
January 1983
Volume
: 54
Issue
: 1
Pages
: 174-178
Article
DOI:
10.1063/1.331727
SO-VID:
f6b12077-ddf4-4d81-9da9-8d49e045eb81
Copyright ©
© 1983
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