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      Microscopic location of electron traps induced by arsenic implantation in silicon dioxide

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      Journal of Applied Physics
      AIP Publishing

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          Optically induced injection of hot electrons into SiO2

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            Avalanche Injection of Electrons into Insulating SiO2 Using MOS Structures

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              Electron trapping by radiation‐induced charge in MOS devices

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                January 1983
                January 1983
                : 54
                : 1
                : 174-178
                Article
                10.1063/1.331727
                f6b12077-ddf4-4d81-9da9-8d49e045eb81
                © 1983
                History

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