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      Measurements of the rectifying barrier heights of various rhodium silicides withn‐silicon

      , , , ,
      Applied Physics Letters
      AIP Publishing

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          Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier System

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            A modified forward I‐V plot for Schottky diodes with high series resistance

            H. Norde (1979)
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              Reverse current-voltage characteristics of metal-silicide Schottky diodes

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                January 15 1980
                January 15 1980
                : 36
                : 2
                : 153-155
                Article
                10.1063/1.91412
                f72bdc4d-6b96-4723-819c-bc55ed99866b
                © 1980
                History

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