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      Native defects in gallium arsenide

      , ,
      Journal of Applied Physics
      AIP Publishing

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          Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

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            Electron traps in bulk and epitaxial GaAs crystals

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              Electronic structure, total energies, and abundances of the elementary point defedts in GaAs.

              (1985)
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                November 1988
                November 1988
                : 64
                : 9
                : R65-R92
                Article
                10.1063/1.341206
                f7d743d7-3213-4180-93c4-6b0c080584f8
                © 1988
                History

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