Electrochemical deposition of layered copper thin films based on the diffusion limited aggregation

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Abstract

In this work layered copper films with smooth surface were successfully fabricated onto ITO substrate by electrochemical deposition (ECD) and the thickness of the films was nearly 60 nm. The resulting films were characterized by SEM, TEM, AFM, XPS, and XRD. We have investigated the effects of potential and the concentration of additives and found that 2D dendritic-like growth process leaded the formation of films. A suitable growth mechanism based on diffusion limited aggregation (DLA) mechanism for the copper films formation is presented, which are meaningful for further designing homogeneous and functional films.

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Screw dislocation-driven growth of two-dimensional nanoplates.

Stephen A Morin, Audrey Forticaux, Matthew Bierman … (2011)

We report the dislocation-driven growth of two-dimensional (2D) nanoplates. They are another type of dislocation-driven nanostructure and could find application in energy storage, catalysis, and nanoelectronics. We first focus on nanoplates of zinc hydroxy sulfate (3Zn(OH)(2)·ZnSO(4)·0.5H(2)O) synthesized from aqueous solutions. Both powder X-ray and electron diffraction confirm the zinc hydroxy sulfate (ZHS) crystal structure as well as their conversion to zinc oxide (ZnO). Scanning electron, atomic force, and transmission electron microscopy reveal the presence of screw dislocations in the ZHS nanoplates. We further demonstrate the generality of this mechanism through the growth of 2D nanoplates of α-Co(OH)(2), Ni(OH)(2), and gold that can also follow the dislocation-driven growth mechanism. Finally, we propose a unified scheme general to any crystalline material that explains the growth of nanoplates as well as different dislocation-driven nanomaterial morphologies previously observed through consideration of the relative crystal growth step velocities at the dislocation core versus the outer edges of the growth spiral under various supersaturations.

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Highly conductive copper nano/microparticles ink via flash light sintering for printed electronics.

Hyun-Jun Hwang, Sung-Jun Joo, Hak-Sung Kim (2014)

In this study, the size effect of copper particles on the flash light sintering of copper (Cu) ink was investigated using Cu nanoparticles (20-50 nm diameter) and microparticles (2 μm diameter). Also, the mixed Cu nano-/micro-inks were fabricated, and the synergetic effects between the Cu nano-ink and micro-ink on flash light sintering were assessed. The ratio of nanoparticles to microparticles in Cu ink and the several flash light irradiation conditions (irradiation energy density, pulse number, on-time, and off-time) were optimized to obtain high conductivity of Cu films. In order to precisely monitor the milliseconds-long flash light sintering process, in situ monitoring of electrical resistance and temperature changes of Cu films was conducted during the flash light irradiation using a real-time Wheatstone bridge electrical circuit, thermocouple-based circuit, and a high-rate data acquisition system. Also, several microscopic and spectroscopic characterization techniques such as scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the flash light sintered Cu nano-/micro-films. In addition, the sheet resistance of Cu film was measured using a four-point probe method. This work revealed that the optimal ratio of nanoparticles to microparticles is 50:50 wt%, and the optimally fabricated and flash light sintered Cu nano-/micro-ink films have the lowest resistivity (80 μΩ cm) among nano-ink, micro-ink, or nano-micro mixed films.

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Is Open Access

Growth of Silicon Nanosheets Under Diffusion-Limited Aggregation Environments

Jaejun Lee, Sung-Wook Kim, Ilsoo Kim … (2015)

The two-dimensional (2D) growth of cubic-structured (silicon) Si nanosheets (SiNSs) was investigated. Freestanding, single-crystalline SiNSs with a thickness of 5–20 nm were grown on various Si substrates under an atmospheric chemical vapor deposition process. Systematic investigation indicated that a diffusion-limited aggregation (DLA) environment that leads to dendritic growth in directions at the initial stage is essential for 2D growth. The kinetic aspects under DLA environments that ascribe to the dendritic and 2D growth were discussed. Under the more dilute conditions made by addition of Ar to the flow of H2, the SiNSs grew epitaxially on the substrates with periodic arrangement at a specific angle depending on the orientation of the substrate. It reveals that SiNSs always grew two dimensionally with exposing (111) surfaces. That is thermodynamically favorable. Electronic supplementary material The online version of this article (doi:10.1186/s11671-015-1138-2) contains supplementary material, which is available to authorized users.

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Journal

Journal ID (nlm-ta): Sci Rep

Journal ID (iso-abbrev): Sci Rep

Title: Scientific Reports

Publisher: Nature Publishing Group

ISSN (Electronic): 2045-2322

Publication date (Electronic): 13 October 2016

Publication date Collection: 2016

Volume: 6

Electronic Location Identifier: 34779

Affiliations

[1 ]School of Physics and Technology, Key Laboratory of Ariticial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China

Author notes

[a ] qmliu@ 123456whu.edu.cn

Article

Publisher Item ID: srep34779

DOI: 10.1038/srep34779

PMC ID: 5062162

PubMed ID: 27734900

SO-VID: f8276966-6646-4bc6-9202-5c970eada56b

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This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

Electrochemical deposition of layered copper thin films based on the diffusion limited aggregation

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Most cited references 6

Screw dislocation-driven growth of two-dimensional nanoplates.

Highly conductive copper nano/microparticles ink via flash light sintering for printed electronics.

Growth of Silicon Nanosheets Under Diffusion-Limited Aggregation Environments

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