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      First demonstration of coherent resonant backward diffraction radiation for a quasi-monochromatic terahertz-light source

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          Abstract

          We proposed coherent resonant backward diffraction radiation (CRBDR), which generates wavelength-tunable quasi-monochromatic lights using a compact diffractor assembly in an accelerator facility of high-energy electron beams, as a unique intense terahertz (THz) light source. Superimposing the coherent backward diffracted radiation emitted by periodically arranged hollow diffractors, it is possible to amplify the frequency components satisfying a resonant condition, and make the radiation monochromatic. We demonstrated the CRBDR using the L-band linac at the Institute for Integrated Radiation and Nuclear Science at Kyoto University. It was observed that the coherent backward diffraction radiation was amplified more than three times at a frequency which was the fundamental resonant frequency in the CRBDR theory. Moreover, the number of diffractors at the saturation of the radiation power was consistent with the number estimated from the electron distribution in a bunch. The experimental results show that the CRBDR is useful as a quasi-monochromatic light source in the THz band.

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          Non-destructive terahertz imaging of illicit drugs using spectral fingerprints.

          The absence of non-destructive inspection techniques for illicit drugs hidden in mail envelopes has resulted in such drugs being smuggled across international borders freely. We have developed a novel basic technology for terahertz imaging, which allows detection and identification of drugs concealed in envelopes, by introducing the component spatial pattern analysis. The spatial distributions of the targets are obtained from terahertz multispectral transillumination images, using absorption spectra measured with a tunable terahertz-wave source. The samples we used were methamphetamine and MDMA, two of the most widely consumed illegal drugs in Japan, and aspirin as a reference.
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            High-power terahertz radiation from relativistic electrons.

            Terahertz (THz) radiation, which lies in the far-infrared region, is at the interface of electronics and photonics. Narrow-band THz radiation can be produced by free-electron lasers and fast diodes. Broadband THz radiation can be produced by thermal sources and, more recently, by table-top laser-driven sources and by short electron bunches in accelerators, but so far only with low power. Here we report calculations and measurements that confirm the production of high-power broadband THz radiation from subpicosecond electron bunches in an accelerator. The average power is nearly 20 watts, several orders of magnitude higher than any existing source, which could enable various new applications. In particular, many materials have distinct absorptive and dispersive properties in this spectral range, so that THz imaging could reveal interesting features. For example, it would be possible to image the distribution of specific proteins or water in tissue, or buried metal layers in semiconductors; the present source would allow full-field, real-time capture of such images. High peak and average power THz sources are also critical in driving new nonlinear phenomena and for pump-probe studies of dynamical properties of materials.
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              Noninvasive, near-field terahertz imaging of hidden objects using a single-pixel detector

              Terahertz (THz) imaging can see through otherwise opaque materials. However, because of the long wavelengths of THz radiation (λ = 400 μm at 0.75 THz), far-field THz imaging techniques suffer from low resolution compared to visible wavelengths. We demonstrate noninvasive, near-field THz imaging with subwavelength resolution. We project a time-varying, intense (>100 μJ/cm 2 ) optical pattern onto a silicon wafer, which spatially modulates the transmission of synchronous pulse of THz radiation. An unknown object is placed on the hidden side of the silicon, and the far-field THz transmission corresponding to each mask is recorded by a single-element detector. Knowledge of the patterns and of the corresponding detector signal are combined to give an image of the object. Using this technique, we image a printed circuit board on the underside of a 115-μm-thick silicon wafer with ~100-μm (λ/4) resolution. With subwavelength resolution and the inherent sensitivity to local conductivity, it is possible to detect fissures in the circuitry wiring of a few micrometers in size. THz imaging systems of this type will have other uses too, where noninvasive measurement or imaging of concealed structures is necessary, such as in semiconductor manufacturing or in ex vivo bioimaging.
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                Author and article information

                Contributors
                sei.n@aist.go.jp
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                5 May 2020
                5 May 2020
                2020
                : 10
                : 7526
                Affiliations
                [1 ]ISNI 0000 0001 2230 7538, GRID grid.208504.b, Research Institute for Measurement and Analytical Instrumentation, , National Institute of Advanced Industrial Science and Technology, Umezono 1-1-1, ; Tsukuba, Ibaraki 305-8568 Japan
                [2 ]ISNI 0000 0004 0372 2033, GRID grid.258799.8, Institute for Integrated Radiation and Nuclear Science, , Kyoto University, 2 Asashiro-nishi, ; Kumatori, Osaka 590-0494 Japan
                Article
                64426
                10.1038/s41598-020-64426-1
                7200690
                32371899
                f958f6b6-56f5-47cd-8790-d43e09e93496
                © The Author(s) 2020

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 4 January 2020
                : 15 April 2020
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                Custom metadata
                © The Author(s) 2020

                Uncategorized
                terahertz optics,optoelectronic devices and components
                Uncategorized
                terahertz optics, optoelectronic devices and components

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