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      Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C

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          Abstract

          The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure.

          PACS: Primary 68.37.Ef; 68.55.Ac; 68.65.Hb; 81.07.Ta; 81.16.Dn

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          Most cited references 40

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          WSXM: a software for scanning probe microscopy and a tool for nanotechnology.

          In this work we briefly describe the most relevant features of WSXM, a freeware scanning probe microscopy software based on MS-Windows. The article is structured in three different sections: The introduction is a perspective on the importance of software on scanning probe microscopy. The second section is devoted to describe the general structure of the application; in this section the capabilities of WSXM to read third party files are stressed. Finally, a detailed discussion of some relevant procedures of the software is carried out.
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            Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

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              Spontaneous ordering of nanostructures on crystal surfaces

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                Author and article information

                Contributors
                storozhevykh@kapella.gpi.ru
                arapkina@kapella.gpi.ru
                vyuryev@kapella.gpi.ru
                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer US (New York )
                1931-7573
                1556-276X
                16 July 2015
                16 July 2015
                2015
                : 10
                Affiliations
                [ ]A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 Russia
                [ ]Technopark of GPI RAS, 38 Vavilov Street, Moscow, 119991 Russia
                Article
                994
                10.1186/s11671-015-0994-0
                4503702
                26177602
                © Storozhevykh et al. 2015

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.

                Categories
                Nano Express
                Custom metadata
                © The Author(s) 2015

                Nanomaterials

                equilibrium structure, ge/si(001) clusters, kinetic-controlled growth

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