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      A reliable approach to charge-pumping measurements in MOS transistors

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          Most cited references 17

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          The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

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            An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

             L.M. Terman (1962)
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              A quasi-static technique for MOS C-V and surface state measurements

               M. Kuhn (1970)
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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                January 1984
                January 1984
                : 31
                : 1
                : 42-53
                Article
                10.1109/T-ED.1984.21472
                © 1984
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