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      Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO\(_3\)-SrTiO\(_3\)-Based Heterostructures

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          Abstract

          The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO\(_3\)-SrTiO\(_3\) heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 {\mu}m, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.

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          Electric Field Control of the LaAlO\(_{3}\)/SrTiO\(_{3}\) Interface Ground State

          Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO\(_{3}\) and SrTiO\(_{3}\), which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits
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            Oxide electronics: Interface takes charge over Si.

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              Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices

              The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LaAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements show that the Rashba coupling constant increases linearly with the interfacial electric field. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.
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                Author and article information

                Journal
                10.1103/PhysRevApplied.4.064003
                1511.07680

                Condensed matter,Nanophysics
                Condensed matter, Nanophysics

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