37
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus

      Preprint

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black phosphorus measured by micro-Raman spectroscopy. The armchair and zigzag thermal conductivities are ~20 and ~40 W m\(^{-1}\) K\(^{-1}\) for black phosphorus films thicker than 15 nm, respectively, and decrease to ~10 and ~20 W m\(^{-1}\) K\(^{-1}\) as the film thickness is reduced, exhibiting significant anisotropy. The thermal conductivity anisotropic ratio is found to be ~2 for thick black phosphorus films and drops to ~1.5 for the thinnest 9.5-nm-thick film. Theoretical modeling reveals that the observed anisotropy is primarily related to the anisotropic phonon dispersion, whereas the intrinsic phonon scattering rates are found to be similar along the armchair and zigzag directions. Surface scattering in the black phosphorus films is shown to strongly suppress the contribution of long-mean-free-path acoustic phonons.

          Related collections

          Most cited references17

          • Record: found
          • Abstract: found
          • Article: found
          Is Open Access

          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
            Bookmark
            • Record: found
            • Abstract: found
            • Article: found
            Is Open Access

            The rise of graphene

            Graphene is a rapidly rising star on the horizon of materials science and condensed matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed matter physics, where quantum relativistic phenomena, some of which are unobservable in high energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.
              Bookmark
              • Record: found
              • Abstract: found
              • Article: found
              Is Open Access

              Black phosphorus field-effect transistors

              Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is a tremendous challenge, and at the same time potentially rewarding. In this work, we succeed in fabricating field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometers. Drain current modulation on the order of 10E5 is achieved in samples thinner than 7.5 nm at room temperature, with well-developed current saturation in the IV characteristics, both are important for reliable transistor performance of the device. Sample mobility is also found to be thickness dependent, with the highest value up to ~ 1000 cm2/Vs obtained at thickness ~ 10 nm. Our results demonstrate the potential of black phosphorus thin crystal as a new two-dimensional material for future applications in nano-electronic devices.
                Bookmark

                Author and article information

                Journal
                2015-03-20
                2015-08-26
                Article
                10.1038/ncomms9572
                1503.06167
                fb79f1b1-e929-4cda-8aa2-e7e4f1133e53

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                Nature Communications 6, 8572 (2015)
                Accepted by Nature Communications
                cond-mat.mes-hall cond-mat.mtrl-sci

                Condensed matter,Nanophysics
                Condensed matter, Nanophysics

                Comments

                Comment on this article