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      Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study

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          Abstract

          Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B 13C 2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations of \mathbf{10^{19}\:\mathrm{\mathbf{at.cm}}^{-3}} were achieved at 1873 K.

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          Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

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            Understanding intermediate-band solar cells

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              Boron-related deep centers in 6H-SiC

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                Author and article information

                Journal
                SciPost Physics
                SciPost Phys.
                Stichting SciPost
                2542-4653
                2018
                September 06 2018
                : 5
                : 3
                Affiliations
                [1 ]The Foundation for Scientific and Industrial Research
                [2 ]University of Lisbon
                [3 ]University of Oslo
                [4 ]Linköping University
                Article
                10.21468/SciPostPhys.5.3.021
                fb978356-ffb6-4d3c-b29d-032687d1eefc
                © 2018

                This work is licensed under a Creative Commons Attribution 4.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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                Physics
                Physics

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