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      Si doping effects on (In,Ga)N nanowires

      Author(s): 1 , 1 , 1 , 1
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

          Shin-ichi Nagahama, Shuji Nakamura, Masayuki Senoh … (1995)
          Article 0 comments Cited 304 times – based on 0 reviews     Review now
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            Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

            Frank Glas (2006)
            Article 0 comments Cited 148 times – based on 0 reviews     Review now
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              GaN based nanorods for solid state lighting

              Shunfeng Li, Andreas Waag (2012)
              Article 0 comments Cited 99 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: December 28 2014
                Publication date (Print): December 28 2014
                Volume: 116
                Issue: 24
                Page: 244310
                Affiliations
                [1 ]Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
                Article
                DOI: 10.1063/1.4905257
                SO-VID: fbac1da9-08d2-4277-901b-4d77bc6aca93
                Copyright © © 2014
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