(Ba 1–xBi 0.67xNa 0.33x)(Ti 1–xBi 0.33xSn 0.67x)O 3 (abbreviated as BBNTBS, 0.02≤ x ≤ 0.12) ceramics were fabricated via a traditional solid state reaction method. The phase transition of BBNTBS from tetragonal to pseudo cubic is demonstrated by XRD and Raman spectra. The BBNTBS (x = 0.1) ceramics have decent properties with a high ɛ r (~2250), small Δɛ/ɛ 25°C values of ±15% over a wide temperature range from –58 to 171 °C, and low tanδ ≤ 0.02 from 10 to 200 °C. The basic mechanisms of conduction and relaxation processes in the high temperature region were thermal activation, and oxygen vacancies might be the ionic charge transport carriers. Meanwhile, BBNTBS (x = 0.1) exhibited decent energy storage density (J d = 0.58 J/cm 3) and excellent thermal stability (the variation of J d is less than 3% in the temperature range of 25–120 °C), which could be a potential candidate for high energy density capacitors.