Application of the Metal Reflector for Redistributing the Focusing Intensity of SPPs

Abstract

The near-field photolithography system has attracted increasing attention in the micro- and nano-manufacturing field, due to the high efficiency, high resolution, and the low cost of the scheme. Nevertheless, the low quality of the nano-patterns significantly limits the industrial application of this technology. Theoretical calculations showed that the reason for the poor nano-patterns is the sharp attenuation of the surface plasmon polaritons (SPPs) in the photoresist layer. The calculation results suggest that the waveguide mode, which is composed of the chromium-equivalent dielectric layer-aluminum, can facilitate the energy flux density distribution in the photoresist layer, resulting in the enhancement of the field intensity of SPPs in the photoresist layer. This reduces the linewidth of nano-patterns, while it enhances the pattern steepness. Eventually, the focusing energy of the photoresist layer can be improved. The finite-difference time-domain method was employed to simulate and verify the theoretical results. It is found that for the rotational near-field photolithography with 355 nm laser illumination, the linewidths of the nano-patterns with and without the aluminum reflector are 17.54 nm and 65.51 nm, respectively. The robustness of the experimental results implies that the application of the aluminum reflector enhances the focusing effect in the photoresist, which can broaden the application of the near-field photolithography.