30
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Matching properties of MOS transistors

      , ,
      IEEE Journal of Solid-State Circuits
      Institute of Electrical and Electronics Engineers (IEEE)

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references7

          • Record: found
          • Abstract: not found
          • Article: not found

          Characterisation and modeling of mismatch in MOS transistors for precision analog design

            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Random error effects in matched MOS capacitors and current sources

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Random errors in MOS capacitors

                Bookmark

                Author and article information

                Journal
                IEEE Journal of Solid-State Circuits
                IEEE J. Solid-State Circuits
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9200
                October 1989
                October 1989
                : 24
                : 5
                : 1433-1439
                Article
                10.1109/JSSC.1989.572629
                fc4191cb-c41e-443e-82e4-e7e95a5c6db2
                © 1989
                History

                Comments

                Comment on this article