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      Matching properties of MOS transistors

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      IEEE Journal of Solid-State Circuits

      Institute of Electrical and Electronics Engineers (IEEE)

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          Characterisation and modeling of mismatch in MOS transistors for precision analog design

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            Random error effects in matched MOS capacitors and current sources

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              Random errors in MOS capacitors

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                Author and article information

                Journal
                IEEE Journal of Solid-State Circuits
                IEEE J. Solid-State Circuits
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9200
                October 1989
                October 1989
                : 24
                : 5
                : 1433-1439
                Article
                10.1109/JSSC.1989.572629
                © 1989
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