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      Edge passivation of shingled poly-Si/SiO x passivated contacts solar cells

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          Abstract

          This work aims at the full recovery of efficiency losses induced by shingling double-side poly-Si/SiO x passivated contacts crystalline silicon solar cells. It focuses on thermally-activated Aluminium Oxide (AlO x ) layers elaborated by thermal Atomic Layer Deposition (ALD) to passivate the edges of shingled cells cut by using the innovative “45° tilt squaring approach”. The whole procedure featuring high-temperature AlO x annealing led to very low cut-related performance losses. Indeed, the efficiency and FF of the passivated shingled cells surpassed the values obtained for the as-cut shingles by 0.5% abs and 2.6% abs, respectively. Approaches for further improvements are also discussed, particularly to overcome the short-circuit current density decrease observed for passivated shingles.

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          Most cited references23

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          Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

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            Silicon surface passivation by atomic layer deposited Al2O3

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              Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

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                Author and article information

                Journal
                epjpv
                https://www.epj-pv.org
                EPJ Photovoltaics
                EPJ Photovolt.
                EDP Sciences
                2105-0716
                06 July 2023
                06 July 2023
                2023
                : 14
                : ( publisher-idID: epjpv/2023/01 )
                : 22
                Affiliations
                [1 ] Univ. Grenoble Alpes, CEA, Liten, Campus Ines, , 73375 Le Bourget du Lac, France,
                [2 ] Aix Marseille Université, Université de Toulon, CNRS, IM2NP, , Marseille, France,
                Author notes
                Article
                pv230015
                10.1051/epjpv/2023013
                fc45155a-d721-4996-8bad-65b2a2791f59
                © F. Dhainaut et al., Published by EDP Sciences, 2023

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                History
                : 14 March 2023
                : 11 May 2023
                : 2 June 2023
                Page count
                Figures: 7, Tables: 0, Equations: 0, References: 35, Pages: 7
                Categories
                High Efficiency Materials and Devices - New concepts
                Regular Article
                Custom metadata
                EPJ Photovoltaics 14, 22 (2023)
                yes
                2023
                2023
                2023
                national-agreement-fr_2023

                Sustainable & Green chemistry,Materials technology,Semiconductors,Materials for energy,Technical & Applied physics,Renewable energy
                edge passivation,AlOx,Shingle solar cell,high temperature,passivated contacts

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