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      Physics of thin-film ferroelectric oxides

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      Reviews of Modern Physics
      American Physical Society (APS)

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          Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

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            Epitaxial BiFeO3 multiferroic thin film heterostructures.

            Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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              Origin of ferroelectricity in perovskite oxides

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                Author and article information

                Journal
                RMPHAT
                Reviews of Modern Physics
                Rev. Mod. Phys.
                American Physical Society (APS)
                0034-6861
                1539-0756
                October 2005
                October 17 2005
                : 77
                : 4
                : 1083-1130
                Article
                10.1103/RevModPhys.77.1083
                fc7c9802-711b-4599-b3c6-f3318dabb26f
                © 2005

                http://link.aps.org/licenses/aps-default-license

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