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      Stage-Rocked Electron Channeling for Crystal Orientation Mapping

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          Abstract

          Microstructural analysis by crystal orientation mapping of bulk functional materials is an essential and routine operation in the engineering of material properties. Far and away the most successfully employed technique, Electron Backscattered Diffraction (EBSD), provides high spatial resolution information at the cost of limited angular resolution and a distorted imaging condition. In this work, we demonstrate a stage-rocked electron channeling approach as a low-cost orientation mapping alternative to EBSD. This is accomplished by automated electron channeling contrast imaging (ECCI) as the microscope stage physically tilts/rotates a sample through a reduced hemisphere of orientations followed by computational reconstruction of electron channeling patterns (ECP). Referred to as Orientation Mapping by Electron Channeling (OMEC), our method offers advantages in terms of local defect analysis, as it combines the advantages of selected area ECP (SACP) and ECCI. We also illustrate dynamic or “adaptive” sampling schemes to increase the throughput of the technique. Finally, we discuss the implications for sample analysis in which large 3D maps of ECCI images can be routinely constructed of challenging crystalline samples. As an electron channeling-based approach to orientation mapping, OMEC may open new routes to characterize crystalline materials with high angular and spatial resolution.

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          Heavily doped p-type PbSe with high thermoelectric performance: an alternative for PbTe.

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            High-resolution elastic strain measurement from electron backscatter diffraction patterns: new levels of sensitivity.

            In this paper, we demonstrate that the shift between similar features in two electron backscatter diffraction (EBSD) patterns can be measured using cross-correlation based methods to +/- 0.05 pixels. For a scintillator screen positioned to capture the usual large solid angle employed in EBSD orientation mapping this shift corresponds to only approximately 8.5 x 10(-5)rad at the pattern centre. For wide-angled EBSD patterns, the variation in the entire strain and rotation tensor can be determined from single patterns. Repeated measurements of small rotations applied to a single-crystal sample, determined using the shifts at four widely separated parts of the EBSD patterns, showed a standard deviation of 1.3 x 10(-4) averaged over components of the displacement gradient tensor. Variations in strains and rotations were measured across the interface in a cross-sectioned Si1-x Gex epilayer on a Si substrate. Expansion of the epilayer close to the section surface is accommodated by tensile strains and lattice curvature that extend a considerable distance into the substrate. Smaller and more localised shear strains are observed close to the substrate-layer interface. EBSD provides an impressive and unique combination of high strain sensitivity, high spatial resolution and ease of use.
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              Electron channeling patterns in the scanning electron microscope

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                Author and article information

                Contributors
                v-dravid@northwestern.edu
                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group UK (London )
                2045-2322
                26 March 2018
                26 March 2018
                2018
                : 8
                : 5175
                Affiliations
                [1 ]ISNI 0000 0001 2299 3507, GRID grid.16753.36, Department of Materials Science and Engineering, , Northwestern University, ; Evanston, IL 60208 United States
                [2 ]ISNI 0000 0001 2299 3507, GRID grid.16753.36, NUANCE Center, , Northwestern University, ; Evanston, IL 60208 United States
                Author information
                http://orcid.org/0000-0003-3188-9730
                Article
                23413
                10.1038/s41598-018-23413-3
                5980099
                29581581
                fce33cf7-4a2c-49bc-840c-d462b25e7c98
                © The Author(s) 2018

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 29 December 2017
                : 5 March 2018
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