Analysis of strain and intermixing in single-layer$ \mathrm{Ge}∕\mathrm{Si}$quantum dots using polarized Raman spectroscopy

Moore, R A; Perova, T S; Fedorov, A. V.; Baranov, A. V.; Yam, V.; Bouchier, D.; Le Thanh, V.; Berwick, K.

doi:10.1103/PhysRevB.73.075322

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Analysis of strain and intermixing in single-layer$\mathrm{Ge}∕\mathrm{Si}$quantum dots using polarized Raman spectroscopy

Author(s): A. V. Baranov , A. V. Fedorov , T. S. Perova , R. A. Moore , V. Yam , D. Bouchier , V. Le Thanh , K. Berwick

Publication date (Electronic): February 17 2006

Journal: Physical Review B

Publisher: American Physical Society (APS)

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Raman spectra ofc-Si1−xGexalloys

M. Alonso-Vale, Karen Winer (1989)

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Measurements of alloy composition and strain in thin GexSi1−xlayers

P. M. Mooney, J. C. Tsang, J. Chu … (1994)

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Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy

Yoshihiko Gotoh, Nobuyuki Koguchi, Katsuyuki Watanabe (2000)

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Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 1098-0121

ISSN (Electronic): 1550-235X

Publication date Created: February 2006

Publication date (Electronic): February 17 2006

Volume: 73

Issue: 7

Article

DOI: 10.1103/PhysRevB.73.075322

SO-VID: fd34661d-e332-44a2-835d-a232035a27b5

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Analysis of strain and intermixing in single-layer\(\mathrm{Ge}∕\mathrm{Si}\)quantum dots using polarized Raman spectroscopy

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Most cited references 30

Raman spectra ofc-Si1−xGexalloys

Measurements of alloy composition and strain in thin GexSi1−xlayers

Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy

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