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      Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history

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          Calculated elastic constants for stress problems associated with semiconductor devices

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            Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates

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              Internal stresses in Cr, Mo, Ta, and Pt films deposited by sputtering from a planar magnetron source

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                March 1987
                March 1987
                : 34
                : 3
                : 689-699
                Article
                10.1109/T-ED.1987.22981
                fd68e966-9822-4a9e-9ca7-ad883db3652d
                © 1987
                History

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