Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects

Abstract

Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments.