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      Iso-oriented monolayer α-MoO3(010) films epitaxially grown on SrTiO3(001)

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          Abstract

          Iso-oriented α-MoO 3(010) films with a monolayer thickness can be grown on SrTiO 3(001) substrate by molecular beam epitaxy viaa self-limiting mechanism.

          Abstract

          The ability to synthesize well-ordered two-dimensional materials under ultra-high vacuum and directly characterize them by other techniques in situcan greatly advance our current understanding on their physical and chemical properties. In this paper, we demonstrate that iso-oriented α-MoO 3films with as low as single monolayer thickness can be reproducibly grown on SrTiO 3(001) substrates by molecular beam epitaxy ((010) MoO3‖(001) STO, [100] MoO3‖[100] STOor [010] STO) through a self-limiting process. While one in-plane lattice parameter of the MoO 3is very close to that of the SrTiO 3( a MoO3= 3.96 Å, a STO= 3.905 Å), the lattice mismatch along other direction is large (∼5%, c MoO3= 3.70 Å), which leads to relaxation as clearly observed from the splitting of streaks in reflection high-energy electron diffraction (RHEED) patterns. A narrow range in the growth temperature is found to be optimal for the growth of monolayer α-MoO 3films. Increasing deposition time will not lead to further increase in thickness, which is explained by a balance between deposition and thermal desorption due to the weak van der Waals force between α-MoO 3layers. Lowering growth temperature after the initial iso-oriented α-MoO 3monolayer leads to thicker α-MoO 3(010) films with excellent crystallinity.

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          Most cited references37

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          Progress, challenges, and opportunities in two-dimensional materials beyond graphene.

          Graphene's success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications.
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            Tightly bound trions in monolayer MoS2.

            Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS(2) is a non-centrosymmetric material with a direct energy gap. Strong photoluminescence, a current on/off ratio exceeding 10(8) in field-effect transistors, and efficient valley and spin control by optical helicity have recently been demonstrated in this material. Here we report the spectroscopic identification in a monolayer MoS(2) field-effect transistor of tightly bound negative trions, a quasiparticle composed of two electrons and a hole. These quasiparticles, which can be optically created with valley and spin polarized holes, have no analogue in conventional semiconductors. They also possess a large binding energy (~ 20 meV), rendering them significant even at room temperature. Our results open up possibilities both for fundamental studies of many-body interactions and for optoelectronic and valleytronic applications in 2D atomic crystals.
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              Edge nonlinear optics on a MoS₂ atomic monolayer.

              The translational symmetry breaking of a crystal at its surface may form two-dimensional (2D) electronic states. We observed one-dimensional nonlinear optical edge states of a single atomic membrane of molybdenum disulfide (MoS2), a transition metal dichalcogenide. The electronic structure changes at the edges of the 2D crystal result in strong resonant nonlinear optical susceptibilities, allowing direct optical imaging of the atomic edges and boundaries of a 2D material. Using the symmetry of the nonlinear optical responses, we developed a nonlinear optical imaging technique that allows rapid and all-optical determination of the crystal orientations of the 2D material at a large scale. Our technique provides a route toward understanding and making use of the emerging 2D materials and devices.
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                Author and article information

                Journal
                NANOHL
                Nanoscale
                Nanoscale
                Royal Society of Chemistry (RSC)
                2040-3364
                2040-3372
                2016
                2016
                : 8
                : 5
                : 3119-3124
                Affiliations
                [1 ]Environmental Molecular Sciences Laboratory
                [2 ]Pacific Northwest National Laboratory
                [3 ]Richland, 99352 USA
                [4 ]Physical and Computational Sciences Directorate
                [5 ]Key Laboratory of Photovoltaic Materials of Henan Province
                [6 ]School of Physics & Electronics
                [7 ]Department of Chemistry
                [8 ]University of Wyoming
                [9 ]Laramie, WY 82072 USA
                Article
                10.1039/C5NR07745A
                feee8189-2dda-460a-9b25-0f391a61e9bc
                © 2016
                History

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