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      Ballistic transport exceeding 28 \mu m in CVD grown graphene

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          Abstract

          We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm\(^2\)/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 \mu m up to 200 K.

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          Author and article information

          Journal
          2015-11-27
          2016-01-12
          10.1021/acs.nanolett.5b04840
          26761190
          1511.08601

          http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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          Nano Lett. 16, 1387 (2016)
          13 pages, 3 figures
          cond-mat.mes-hall

          Nanophysics

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