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# Ballistic transport exceeding 28 \mu m in CVD grown graphene

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### Abstract

We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$$^2$$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 \mu m up to 200 K.

### Author and article information

###### Journal
2015-11-27
2016-01-12
10.1021/acs.nanolett.5b04840
26761190
1511.08601