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Ballistic transport exceeding 28 \mu m in CVD grown graphene

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      Abstract

      We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm\(^2\)/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 \mu m up to 200 K.

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      Journal
      2015-11-27
      2016-01-12
      1511.08601 10.1021/acs.nanolett.5b04840

      http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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      Nano Lett. 16, 1387 (2016)
      13 pages, 3 figures
      cond-mat.mes-hall

      Nanophysics

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