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      High-power 1.3-µm InGaAsP P-substrate buried crescent lasers

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          InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement

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            Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

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              Components for optical communications systems: A review

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                Author and article information

                Journal
                Journal of Lightwave Technology
                J. Lightwave Technol.
                Institute of Electrical and Electronics Engineers (IEEE)
                0733-8724
                October 1985
                1985
                : 3
                : 5
                : 978-984
                Article
                10.1109/JLT.1985.1074329
                00d29e5b-0896-4f6d-b3d9-0a9f430aa610
                © 1985
                History

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