3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

[1 ]Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan

[2 ]Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan