Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH<sub>3</sub> Treatment

Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M

doi:10.1109/LED.2015.2477163

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Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH<sub>3</sub> Treatment

Author(s): Ji Chen , Kuan-Chang Chang , Ting-Chang Chang , Tsung-Ming Tsai , Chih-Hung Pan , Rui Zhang , Jen-Chung Lou , Tian-Jian Chu , Cheng-Hsien Wu , Min-Chen Chen , Ya-Chi Hung , Yong-En Syu , Jin-Cheng Zheng , Simon M. Sze

Publication date (Print): November 2015

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: November 2015

Publication date (Print): November 2015

Volume: 36

Issue: 11

Pages: 1138-1141

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DOI: 10.1109/LED.2015.2477163

SO-VID: 081db2f1-a8fd-42d4-a0bb-528145fdd7d1

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Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH<sub>3</sub> Treatment

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