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      Effects of film polarities on InN growth by molecular-beam epitaxy

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

          H Harima, J. Furthm�ller, A.V. Mudryi … (2002)
          Article 0 comments Cited 201 times – based on 0 reviews     Review now
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            Optical bandgap energy of wurtzite InN

            Hiroshi Harima, Masashi Nakao, Takashi Matsuoka … (2002)
            Article 0 comments Cited 116 times – based on 0 reviews     Review now
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              Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

              Goutam Koley, Lester F. Eastman, Hai Lu … (2001)
              Article 0 comments Cited 64 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: July 14 2003
                Publication date (Print): July 14 2003
                Volume: 83
                Issue: 2
                Pages: 251-253
                Article
                DOI: 10.1063/1.1592309
                SO-VID: 0c450333-f32e-448c-be06-b342a7cd74a2
                Copyright © © 2003
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