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      Reduction of fast surface states onp‐type GaAs

      Author(s): , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          • Record: found
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          The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

          A. Goetzberger, E. H. Nicollian (1967)
          Article 0 comments Cited 339 times – based on 0 reviews     Review now
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            New anodic native oxide of GaAs with improved dielectric and interface properties

            Hans L. Hartnagel, Hideki Hasegawa, Kevin Forward (1975)
            Article 0 comments Cited 35 times – based on 0 reviews     Review now
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              Thermal oxidation of GaAs

              S. P. Murarka (1975)
              Article 0 comments Cited 29 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: April 15 1982
                Publication date (Print): April 15 1982
                Volume: 40
                Issue: 8
                Pages: 700-703
                Article
                DOI: 10.1063/1.93240
                SO-VID: 1055e946-450f-4c7f-9652-f5710ae634bf
                Copyright © © 1982
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