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A steady‐state constant capacitance method for the characterization of deep energy levels in semiconductors
November 1980
November 1980
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Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
A.F. Tasch, C.T. Sah, L. Forbes … (1970)
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Deep Level Impurities in Semiconductors
H. Grimmeiss (1977)
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Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique
J.A. Pals (1974)