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      Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

      Science (New York, N.Y.)
      American Association for the Advancement of Science (AAAS)

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          Abstract

          We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

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          Journal
          10.1126/science.1083212
          12764192

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