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In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 µA/µm, I<inf>on</inf>/I<inf>off</inf> ∼ 1×10<sup>5</sup>, DIBL= 16–54 mV/V, and 1.4X external strain enhancement
proceedings-article
I-Hsieh Wong ,
Yen-Ting Chen ,
Shih-Hsien Huang ,
Wen-Hsien Tu ,
Yu-Sheng Chen ,
Tai-Cheng Shieh ,
Tzu-Yao Lin ,
Huang-Siang Lan ,
C. W. Liu
December 2014
2014 IEEE International Electron Devices Meeting (IEDM)
15, 2014 - 17, 2014
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