Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source

Pohl, L.; Moser, M.; Stapor, A.; Scholz, F.; Hostalek, M.; Molassioti, A.

doi:10.1063/1.100844

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Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source

Author(s): A. Molassioti , M. Moser , A. Stapor , F. Scholz , M. Hostalek , L. Pohl

Publication date Created: February 27 1989

Publication date (Print): February 27 1989

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Photoluminescence identification of the C and Be acceptor levels in InP

B. Skromme, J. D. Oberstar, G. Stillman … (1984)

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An investigation of the 1.36 eV photoluminescence spectrum of heat-treated InP using Zeeman spectroscopy and strain effects

M. Skolnick, L. Eaves, K Duncan … (1984)

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The 1.36 eV radiative transition in InP: its dependence on growth conditions in MBE and MOCVD material

G J Davies, B. Wakefield, L. Eaves … (1984)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: February 27 1989

Publication date (Print): February 27 1989

Volume: 54

Issue: 9

Pages: 857-858

Article

DOI: 10.1063/1.100844

SO-VID: 19999802-abd2-4414-a10b-23651455af8b

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Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source

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Most cited references 6

Photoluminescence identification of the C and Be acceptor levels in InP

An investigation of the 1.36 eV photoluminescence spectrum of heat-treated InP using Zeeman spectroscopy and strain effects

The 1.36 eV radiative transition in InP: its dependence on growth conditions in MBE and MOCVD material

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