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      Time-Domain Separation of Optical Properties From Structural Transitions in Resonantly Bonded Materials

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          Abstract

          The extreme electro-optical contrast between crystalline and amorphous states in phase change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise due to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a unique combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 femtoseconds due to a rapid depletion of electrons from resonantly-bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2 ps time constant. The optical changes are an order-of-magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

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          Most cited references12

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          Phase-change materials for rewriteable data storage.

          Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.
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            Understanding the phase-change mechanism of rewritable optical media.

            Present-day multimedia strongly rely on rewritable phase-change optical memories. We demonstrate that, different from the current consensus, Ge(2)Sb(2)Te(5), the material of choice in DVD-RAM, does not possess the rocksalt structure but more likely consists of well-defined rigid building blocks that are randomly oriented in space consistent with cubic symmetry. Laser-induced amorphization results in drastic shortening of covalent bonds and a decrease in the mean-square relative displacement, demonstrating a substantial increase in the degree of short-range ordering, in sharp contrast to the amorphization of typical covalently bonded solids. This novel order-disorder transition is due to an umbrella-flip of Ge atoms from an octahedral position into a tetrahedral position without rupture of strong covalent bonds. It is this unique two-state nature of the transformation that ensures fast DVD performance and repeatable switching over ten million cycles.
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              Breaking the speed limits of phase-change memory.

              Phase-change random-access memory (PCRAM) is one of the leading candidates for next-generation data-storage devices, but the trade-off between crystallization (writing) speed and amorphous-phase stability (data retention) presents a key challenge. We control the crystallization kinetics of a phase-change material by applying a constant low voltage via prestructural ordering (incubation) effects. A crystallization speed of 500 picoseconds was achieved, as well as high-speed reversible switching using 500-picosecond pulses. Ab initio molecular dynamics simulations reveal the phase-change kinetics in PCRAM devices and the structural origin of the incubation-assisted increase in crystallization speed. This paves the way for achieving a broadly applicable memory device, capable of nonvolatile operations beyond gigahertz data-transfer rates.
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                Author and article information

                Journal
                2014-12-02
                2015-08-10
                Article
                10.1038/nmat4359
                1412.0901
                1b50bd9e-3f72-41bc-b35e-928699883588

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                Custom metadata
                Nature Materials 14, 991 (2015)
                cond-mat.mtrl-sci cond-mat.other

                Condensed matter
                Condensed matter

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