A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices

Messenger, G.C.

doi:10.1109/23.277547

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A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices

Author(s): G.C. Messenger

Publication date (Print): June 1992

Journal: IEEE Transactions on Nuclear Science

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Title: IEEE Transactions on Nuclear Science

Abbreviated Title: IEEE Trans. Nucl. Sci.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189499

Publication date (Print): June 1992

Volume: 39

Issue: 3

Pages: 468-473

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DOI: 10.1109/23.277547

SO-VID: 1b56ff88-dbff-4e63-92ae-6c9e680d9784

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A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices

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