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      Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

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      Applied Physics Letters
      AIP Publishing

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          Electron channeling patterns in the scanning electron microscope

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            Chemical Vapor Deposition of Single Crystalline β-SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer

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              IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                March 1983
                March 1983
                : 42
                : 5
                : 460-462
                Article
                10.1063/1.93970
                1da6290c-3e02-4c0b-ac4a-704d5a900eda
                © 1983
                History

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