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      Anisotropic Photoluminescence of Poly(3-hexyl thiophene) and Their Composites with Single-Walled Carbon Nanotubes Highly Separated in Metallic and Semiconducting Tubes

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          Abstract

          In this work, the effect of the single-walled carbon nanotubes (SWNTs) as the mixtures of metallic and semiconducting tubes (M + S-SWNTs) as well as highly separated semiconducting (S-SWNTs) and metallic (M-SWNTs) tubes on the photoluminescence (PL) of poly(3-hexyl thiophene) (P3HT) was reported. Two methods were used to prepare such composites, that is, the chemical interaction of the two constituents and the electrochemical polymerization of the 3-hexyl thiophene onto the rough Au supports modified with carbon nanotubes (CNTs). The measurements of the anisotropic PL of these composites have highlighted a significant diminution of the angle of the binding of the P3HT films electrochemical synthetized onto Au electrodes covered with M + S-SWNTs. This change was attributed to metallic tubes, as was demonstrated using the anisotropic PL measurements carried out on the P3HT/M-SWNTs and P3HT/S-SWNTs composites. Small variations in the angle of the binding were reported in the case of the composites prepared by chemical interaction of the two constituents. The proposed mechanism to explain this behavior took into account the functionalization process of CNTs with P3HT. The experimental arguments of the functionalization process of CNTs with P3HT were shown by the UV-VIS-NIR and FTIR spectroscopy as well as surface-enhanced Raman scattering (SERS). A PL quenching process of P3HT induced both in the presence of S-SWNTs and M-SWNTs was reported, too. This process origins in the various de-excitation pathways which can be developed considering the energy levels diagram of the two constituents of each studied composite.

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          Most cited references41

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          Structural (\(\mathit{n},\mathit{m}\)) Determination of Isolated Single-Wall Carbon Nanotubes by Resonant Raman Scattering

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            Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.

            In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.
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              Wafer-scale fabrication of separated carbon nanotube thin-film transistors for display applications.

              Preseparated, semiconductive enriched carbon nanotubes hold great potential for thin-film transistors and display applications due to their high mobility, high percentage of semiconductive nanotubes, and room-temperature processing compatibility. Here in this paper, we report our progress on wafer-scale processing of separated nanotube thin-film transistors (SN-TFTs) for display applications, including key technology components such as wafer-scale assembly of high-density, uniform separated nanotube networks, high-yield fabrication of devices with superior performance, and demonstration of organic light-emitting diode (OLED) switching controlled by a SN-TFT. On the basis of separated nanotubes with 95% semiconductive nanotubes, we have achieved solution-based assembly of separated nanotube thin films on complete 3 in. Si/SiO(2) wafers, and further carried out wafer-scale fabrication to produce transistors with high yield (>98%), small sheet resistance ( approximately 25 kOmega/sq), high current density ( approximately 10 microA/microm), and superior mobility ( approximately 52 cm(2) V(-1) s(-1)). Moreover, on/off ratios of >10(4) are achieved in devices with channel length L > 20 microm. In addition, OLED control circuit has been demonstrated with the SN-TFT, and the modulation in the output light intensity exceeds 10(4). Our approach can be easily scaled to large areas and could serve as critical foundation for future nanotube-based display electronics.
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                Author and article information

                Contributors
                Role: Academic Editor
                Journal
                Molecules
                Molecules
                molecules
                Molecules
                MDPI
                1420-3049
                08 January 2021
                January 2021
                : 26
                : 2
                : 294
                Affiliations
                [1 ]Optical Processes in Nanostructure Materials Laboratory, National Institute of Materials Physics, Atomistilor Str. 405 A, 77125 Magurele, Romania; monica.daescu@ 123456infim.ro (M.D.); adelina.udrescu@ 123456infim.ro (A.U.)
                [2 ]Neutron Physics, Joint Institute for Nuclear Research Laboratory, 6 Joliot-Curie Street, 141980 Dubna, Russia; arzuman@ 123456jinr.ru (G.A.); hero170184@ 123456mail.ru (K.M.)
                Author notes
                [* ]Correspondence: barac@ 123456infim.ro ; Tel.: +40-21-369-0170
                Author information
                https://orcid.org/0000-0002-8755-0747
                https://orcid.org/0000-0003-3178-5237
                https://orcid.org/0000-0001-7503-9362
                Article
                molecules-26-00294
                10.3390/molecules26020294
                7827376
                33435534
                1ec2bc01-b000-4fe0-9324-953469ff4d82
                © 2021 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 07 December 2020
                : 05 January 2021
                Categories
                Article

                anisotropic photoluminescence,photoluminescence quenching process,sers spectroscopy,ir spectroscopy

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