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      Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

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          Abstract

          We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the \rho(T,n) data.

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          Possible Metal/Insulator Transition at B=0 in Two Dimensions

          J. E. Furneaux, G. Kravchenko, S. V. Kravchenko … (1994)
          We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, \(n_{cr}\sim 10^{11}\) cm\(^{-2}\)), CONVENTIONAL WEAK LOCALIZATION IS OVERPOWERED BY A SHARP DROP OF RESISTIVITY BY AN ORDER OF MAGNITUDE with decreasing temperature below 1--2 K. No further evidence for electron localization is seen down to at least 20 mK. For \(n_s
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            Flow diagram of the metal-insulator transition in two dimensions

            S. V. Kravchenko, S. Anissimova, A. Punnoose … (2006)
            The discovery of the metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenged the veracity of one of the most influential conjectures in the physics of disordered electrons, which states that `in two dimensions, there is no true metallic behaviour'; no matter how weak the disorder, electrons would be trapped and unable to conduct a current. However, that theory did not account for interactions between the electrons. Here we investigate the interplay between the electron-electron interactions and disorder near the MIT using simultaneous measurements of electrical resistivity and magnetoconductance. We show that both the resistance and interaction amplitude exhibit a fan-like spread as the MIT is crossed. From these data we construct a resistance-interaction flow diagram of the MIT that clearly reveals a quantum critical point, as predicted by the two-parameter scaling theory (Punnoose and Finkel'stein, Science 310, 289 (2005)). The metallic side of this diagram is accurately described by the renormalization group theory without any fitting parameters. In particular, the metallic temperature dependence of the resistance sets in when the interaction amplitude reaches gamma_2 = 0.45 - a value in remarkable agreement with the one predicted by the theory.
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              Author and article information

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              Publication date Created: 2008-02-12
              Article
              DOI: 10.1103/PhysRevLett.100.046405
              ArXiV ID: 0802.1629
              SO-VID: 1f45f362-ccc5-4e41-9cb4-92767e607a88
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              http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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              Journal reference Phys. Rev. Lett. 100, 046405 (2008)
              Comments 4 pages, 4 figures, 1 table
              Categories cond-mat.str-el

              ScienceOpen disciplines: Condensed matter
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              ScienceOpen disciplines: Condensed matter

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