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      Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect

      Author(s): 1 , 1 , 2 , 3
      Publication date Created:
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      Journal: AIP Advances
      Publisher: AIP Publishing

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          Transient Phosphorus Diffusion Below the Amorphization Threshold

          Martin D. Giles (1991)
          Article 0 comments Cited 71 times – based on 0 reviews     Review now
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            Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron

            G. Watkins (1975)
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              Electronically activated boron-oxygen-related recombination centers in crystalline silicon

              Jan Schmidt, Karsten Bothe (2006)
              Article 0 comments Cited 61 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: AIP Advances
                Abbreviated Title: AIP Advances
                Publisher: AIP Publishing
                ISSN (Electronic): 2158-3226
                Publication date Created: January 2015
                Publication date (Print): January 2015
                Volume: 5
                Issue: 1
                Page: 017101
                Affiliations
                [1 ]CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
                [2 ]TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, Germany
                [3 ]Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany
                Article
                DOI: 10.1063/1.4905066
                SO-VID: 2542d1e3-91bf-4550-aa74-88d81ab9171e
                Copyright © © 2015
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                http://creativecommons.org/licenses/by/3.0/

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