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      Interface-induced multiferroism by design in complex oxide superlattices

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          Abstract

          <p id="d2679755e353">Developments in synthesis and characterizing artificially structured materials have greatly advanced the possibility to explore new states of matter in material science. Recent discoveries show that new quantum states can be achieved at heterointerfaces with various electric and mechanical boundary conditions. It remains an open question of how to design ultrathin layers with properties inaccessible in bulk phases that are amenable to technological applications. In this work, we grow heterostructures with extremely high-quality interfaces shown by state-of-the-art atomically resolved electron microscopy and spectroscopy. This combination allows us to identify an interface-induced structure that stabilizes ferromagnetism. Coupled with theory, we provide a conceptually useful recipe to design low-dimensional materials with unique functionalities, in line with the loop “make, measure, model.” </p><p class="first" id="d2679755e356">Interfaces between materials present unique opportunities for the discovery of intriguing quantum phenomena. Here, we explore the possibility that, in the case of superlattices, if one of the layers is made ultrathin, unexpected properties can be induced between the two bracketing interfaces. We pursue this objective by combining advanced growth and characterization techniques with theoretical calculations. Using prototype La <sub>2/3</sub>Sr <sub>1/3</sub>MnO <sub>3</sub> (LSMO)/BaTiO <sub>3</sub> (BTO) superlattices, we observe a structural evolution in the LSMO layers as a function of thickness. Atomic-resolution EM and spectroscopy reveal an unusual polar structure phase in ultrathin LSMO at a critical thickness caused by interfacing with the adjacent BTO layers, which is confirmed by first principles calculations. Most important is the fact that this polar phase is accompanied by reemergent ferromagnetism, making this system a potential candidate for ultrathin ferroelectrics with ferromagnetic ordering. Monte Carlo simulations illustrate the important role of spin–lattice coupling in LSMO. These results open up a conceptually intriguing recipe for developing functional ultrathin materials via interface-induced spin–lattice coupling. </p>

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          First-principles calculations of the electronic structure and spectra of strongly correlated systems: theLDA+Umethod

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            Colossal Magnetoresistant Materials: The Key Role of Phase Separation

            The study of the manganese oxides, widely known as manganites, that exhibit the ``Colossal'' Magnetoresistance (CMR) effect is among the main areas of research within the area of Strongly Correlated Electrons. After considerable theoretical effort in recent years, mainly guided by computational and mean-field studies of realistic models, considerable progress has been achieved in understanding the curious properties of these compounds. These recent studies suggest that the ground states of manganite models tend to be intrinsically inhomogeneous due to the presence of strong tendencies toward phase separation, typically involving ferromagnetic metallic and antiferromagnetic charge and orbital ordered insulating domains. Calculations of the resistivity versus temperature using mixed states lead to a good agreement with experiments. The mixed-phase tendencies have two origins: (i) electronic phase separation between phases with different densities that lead to nanometer scale coexisting clusters, and (ii) disorder-induced phase separation with percolative characteristics between equal-density phases, driven by disorder near first-order metal-insulator transitions. The coexisting clusters in the latter can be as large as a micrometer in size. It is argued that a large variety of experiments reviewed in detail here contain results compatible with the theoretical predictions. It is concluded that manganites reveal such a wide variety of interesting physical phenomena that their detailed study is quite important for progress in the field of Correlated Electrons.
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              Electric field effect in correlated oxide systems.

              Semiconducting field-effect transistors are the workhorses of the modern electronics era. Recently, application of the field-effect approach to compounds other than semiconductors has created opportunities to electrostatically modulate types of correlated electron behaviour--including high-temperature superconductivity and colossal magnetoresistance--and potentially tune the phase transitions in such systems. Here we provide an overview of the achievements in this field and discuss the opportunities brought by the field-effect approach.
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                Author and article information

                Journal
                Proceedings of the National Academy of Sciences
                Proc Natl Acad Sci USA
                Proceedings of the National Academy of Sciences
                0027-8424
                1091-6490
                June 12 2017
                : 201706814
                Article
                10.1073/pnas.1706814114
                5495282
                28607082
                2759398d-2517-4fe1-9c07-027adfd0e222
                © 2017

                Free to read

                http://www.pnas.org/site/misc/userlicense.xhtml

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