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      High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction

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          Abstract

          A high‐responsivity near‐infrared photodetector is demonstrated using a transparent ZnO top gate‐modulated graphene/Ge Schottky junction. The responsivity of a graphene/Ge junction photodetector characterized with a scanning photocurrent microscopy system is improved to 0.75 A W −1. This result is 5 to 35 times higher than the previously reported graphene/Ge photodetectors that did not use gate modulation. The detectivity is also improved to 2.53 × 10 9 cm Hz 1/2 W −1 at V g = −10 V from 0.43 × 10 9 cm Hz 1/2 W −1 at V g = 0 V. The performance of this gate‐modulated graphene/Ge Schottky junction base infrared (IR) detector is comparable to a commercially available IR photodetector, but the fabrication process is much simpler and compatible with glass or flexible substrates.

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          Fine structure constant defines visual transparency of graphene.

          R. Nair, P. Blake, A N Grigorenko … (2008)
          There are few phenomena in condensed matter physics that are defined only by the fundamental constants and do not depend on material parameters. Examples are the resistivity quantum, h/e2 (h is Planck's constant and e the electron charge), that appears in a variety of transport experiments and the magnetic flux quantum, h/e, playing an important role in the physics of superconductivity. By and large, sophisticated facilities and special measurement conditions are required to observe any of these phenomena. We show that the opacity of suspended graphene is defined solely by the fine structure constant, a = e2/hc feminine 1/137 (where c is the speed of light), the parameter that describes coupling between light and relativistic electrons and that is traditionally associated with quantum electrodynamics rather than materials science. Despite being only one atom thick, graphene is found to absorb a significant (pa = 2.3%) fraction of incident white light, a consequence of graphene's unique electronic structure.
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            Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices.

            Kallol Roy, Medini Padmanabhan, Srijit Goswami … (2013)
            Combining the electronic properties of graphene and molybdenum disulphide (MoS2) in hybrid heterostructures offers the possibility to create devices with various functionalities. Electronic logic and memory devices have already been constructed from graphene-MoS2 hybrids, but they do not make use of the photosensitivity of MoS2, which arises from its optical-range bandgap. Here, we demonstrate that graphene-on-MoS2 binary heterostructures display remarkable dual optoelectronic functionality, including highly sensitive photodetection and gate-tunable persistent photoconductivity. The responsivity of the hybrids was found to be nearly 1 × 10(10) A W(-1) at 130 K and 5 × 10(8) A W(-1) at room temperature, making them the most sensitive graphene-based photodetectors. When subjected to time-dependent photoillumination, the hybrids could also function as a rewritable optoelectronic switch or memory, where the persistent state shows almost no relaxation or decay within experimental timescales, indicating near-perfect charge retention. These effects can be quantitatively explained by gate-tunable charge exchange between the graphene and MoS2 layers, and may lead to new graphene-based optoelectronic devices that are naturally scalable for large-area applications at room temperature.
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              Mixed-dimensional van der Waals heterostructures

              Deep Jariwala, Tobin Marks, Mark Hersam (2017)
              The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling-bond-free surface will interact with another through vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through non-covalent interactions. We present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, we highlight the challenges and opportunities for mixed-dimensional vdW heterostructures.
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                Author and article information

                Journal
                Title: Advanced Electronic Materials
                Abbreviated Title: Adv Elect Materials
                Publisher: Wiley
                ISSN (Print): 2199-160X
                ISSN (Electronic): 2199-160X
                Publication date Created: June 2019
                Publication date (Electronic): March 28 2019
                Publication date (Print): June 2019
                Volume: 5
                Issue: 6
                Affiliations
                [1 ] School of Materials Science and Engineering Center for Emerging Electronic Devices and Systems Gwangju Institute of Science and Technology 123 Cheomdangwagi‐ro Buk‐gu Gwangju 61005 Republic of Korea
                [2 ] Flexible Electronics Laboratory School of Materials Science and Engineering Gwangju Institute of Science and Technology 123 Cheomdangwagi‐ro Buk‐gu Gwangju 61005 Republic of Korea
                Article
                DOI: 10.1002/aelm.201800957
                SO-VID: 2e6f2b9c-1d96-4942-ab98-3f6b4cb2574b
                Copyright © © 2019
                License:

                http://onlinelibrary.wiley.com/termsAndConditions#vor

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