An La 0.6Gd 0.1Sr 0.3Mn 0.75Si 0.25O 3 ceramic was prepared via a solution-based chemical technique. X-ray diffraction study confirms the formation of the compound in the orthorhombic structure with the Pnma group space. Dielectric properties have been investigated in the temperature range of 85–290 K with the frequency range 40 Hz to 2 MHz. The conductivity spectra have been investigated by the Jonscher universal power law: σ( ω) = σ dc + Aω n , where ω is the frequency of the ac field, and n is the exponent. The deduced exponent ‘ n’ values prove that a hopping model is the dominating mechanism in the material. Based on dc-electrical resistivity study, the conduction process is found to be dominated by a thermally activated small polaron hopping (SPH) mechanism. Complex impedance analysis (CIA) indicates the presence of a relaxation phenomenon and allows us to modelize the sample in terms of an electrical equivalent circuit. Moreover, the impedance study confirms the contribution of grain boundaries to the electrical properties.
A complex impedance spectrum for La 0.6Gd 0.1Sr 0.3Mn 0.75Si 0.25O 3 sample at different temperatures with electrical equivalent circuit.