Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

Lee, Jung-Hee; Do, Kwan-Woo; Yang, Chung-Mo; Kang, Ik-Su; Kim, Kyung–Min; Back, Kyoung-Hum; Cho, Hyun-Ick; Lee, Heon-Bok; Kong, Sung-Ho; Hahm, Sung-Ho; Kwon, Dae-Hyuk; Lee, Jong-Hyun

doi:10.1143/JJAP.45.2975

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Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

Author(s): Kwan-Woo Do , Chung-Mo Yang , Ik-Su Kang , Kyung-Min Kim , Kyoung-Hum Back , Hyun-Ick Cho , Heon-Bok Lee , Sung-Ho Kong , Sung-Ho Hahm , Dae-Hyuk Kwon , Jong-Hyun Lee , Jung-Hee Lee

Publication date (Electronic): April 25 2006

Journal: Japanese Journal of Applied Physics

Publisher: Japan Society of Applied Physics

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Journal ID (publisher-id): JAPNDE

Title: Japanese Journal of Applied Physics

Abbreviated Title: Jpn. J. Appl. Phys.

Publisher: Japan Society of Applied Physics

ISSN (Print): 0021-4922

ISSN (Electronic): 1347-4065

Publication date Created: April 2006

Publication date (Electronic): April 25 2006

Volume: 45

Issue: 4B

Pages: 2975-2979

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DOI: 10.1143/JJAP.45.2975

SO-VID: 319dce1b-639c-4e7b-a824-ad70f9e0a5a2

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Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

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