Ferroelectric control of electron half-metallicity in $ A$ -type antiferromagnets and its application to nonvolatile memory devices

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Author and article information

Contributors

Peng Jiang: (View ORCID Profile)

Stefano Sanvito: (View ORCID Profile)

Journal

Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 2469-9950

ISSN (Electronic): 2469-9969

Publication date Created: December 2020

Publication date (Electronic): December 16 2020

Volume: 102

Issue: 24

Article

DOI: 10.1103/PhysRevB.102.245417

SO-VID: 34b9ddc6-4b40-46c8-bc3c-c0e0037ef06b

License:

https://link.aps.org/licenses/aps-default-license

History

Data availability:

Comments

Comment on this article

scite_

Cited by 5

See all cited by

Ferroelectric control of electron half-metallicity in \(A\) -type antiferromagnets and its application to nonvolatile memory devices

Read this article at